Flash память фирмы Sharp

Dual Power Supply Flash Memory
Model Density Configuration Erase
block		 Access
time (ns)		 Supply
voltage (V)		 Read
current
mA Max
f=8MHz		 Standby
current
µA Max		 Operating
temp.
(°C)		 Package
Vcc=5V Vcc Vpp SOP TSOP RTSOP CSP
70 85 120 5 12
LH28F008SA 8M 1Mx8 64kB   X X X X 35 100 C,E2 44 40 40 42
5V Single-Power-Supply Flash Memory
Model Density Configuration Erase
block		 Access
time (ns)		 Supply
voltage (V)		 Read
current
mA Max
f=8MHz		 Standby
current
µA Max		 Operating
temp.
(°C)		 Package
Vcc=5V Vcc=3.3V Vcc Vpp Min
Read		 SOP TSOP RTSOP
60 70 120 5 5
LH28F004SU 4M 512Kx8 16kB X     X X 5 60 100 C,I   40  
LH28F016SU 16M 2Mx8/1Mx16 64kB   X X X X 3.3 35 100 C,I   56 56
LH28F020SU 2M 256Kx8 16kB X     X X 5 60 100 C,I 32 32  
LH28F400SU 4M 512Kx8/256Kx16 16kB X     X X 5 60 100 C,I 44 48/56  
LH28F800SU 8M 1Mx8/512Kx16 64kB   X   X X 3.3 35 100 C,I   56 56
3V Single-Power-Supply Flash Memory
Model Density Configuration Erase
block		 Access
time
(ns)		 Supply
voltage (V)		 Read
current
mA Max
f=8MHz		 Standby
current
µA Max		 Operating
temp.
(°C)		 Package
Vcc=3.0V Vcc Vpp SOP TSOP RTSOP CSP
120 150 3 3
LH28F016LL 16M 2Mx8/1Mx16 64kB X X X X 35 80 C,I   56 56  
Dual Works Flash Memory
Model Density Configuration Erase
block		 Access time (ns) Supply voltage (V) Read
current
mA Max
f=8MHz		 Standby
current
µA Max		 Temp
(°C)		 Pkg
Vcc=5V Vcc=3.3V Vcc=2.7V Vcc Vpp Min
Read		 TSOP
85 100 150 120 190 120 150 190 2.7 5 2.7 2.9 5
LH28F008SCHSD 8M 512kx8x2 64kB X           X   X X   X X 2.7 TDB 100 C 48
LH28F040SUTD 4M 256kx8x2 16kB     X   X     X X X     X 2.7 35 160 E1 40
LH28F160SGED 16M 512Kx16x2 64kB   X       X     X X X   X 2.7 TDB 100 C 48
LH28F320S3TD 32M 2Mx8x2/1Mx16x2 64kB       X   X     X   X   X 2.7 TDB 100 C 56
Smart Voltage (organized x8) Flash Memory
Model Density Config Erase
block		 Access time (ns) Supply
voltage (V)		 Read
current
mA Max
f=8MHz		 Standby
current
µA Max		 Temp
(°C)		 Package Remarks
Vcc
5V 3V 2.7V Smart
voltage		 Min
Read		 SOP TSOP RTSOP CSP
85 95 120 120 150 150
LH28F002SC 2M 256kx8 64kB   X X X X X DiagraM 2.7 50 100 C,I 44 40   48 Intel compatible
LH28F004SC 4M 512kx8 64kB X   X X X X DiagraM 2.7 50 100 C,I 44 40   48 Intel compatible
LH28F008SC 8M 1Mx8 64kB X   X X X X DiagraM 2.7 50 100 C,I 44 40 40 48 Intel compatible
LH28F016SC 16M 2Mx8 64kB   X X X X X DiagraM 2.7 50 100 C,I 44 40 40 48 Intel compatible
Smart Voltage (organized x16) Flash Memory
Model Density Config Erase
block		 Access time (ns) Supply voltage (V) Read
current
mA Max
f=8MHz		 Standby
current
µA Max		 Temp
(°C)		 Package Remarks
Vcc=5V Vcc=3V Vcc=2.7V Smart voltage Min
Read		 SOP TSOP RTSOP CSP
70 100 85 100 100 120
LH28F800SG 8M 512kx16 32 kW X X X X X X DiagraM 2.7 50 100 C,I 44 48 48 48 2.7V read, write, erase avialable
Boot Block Smart Voltage (organized x16) Flash Memory (Pin compatible with Flash memories from Intel)
Model Density Config Boot
type		 Erase
block		 Access time (ns) Supply
voltage (V)		 Read
current
mA Max
f=8MHz		 Standby
current
µA Max		 Temp
(°C)
T B Boot
size		 Main
size		 Vcc=5V Vcc=3V Vcc=2.7V Vcc=2.7 to 2.6V Vcc=2.4 to 3.0V Smart
voltage		 Min
Read
85 120 100 130 120 150 100 120 120 150
LH28F160BG 16M 1Mx16 X X 4kW 32kW             X X X X Diagram 2.4 TBD TBD C,I
LH28F400BG 4M 256kx16 X X 4kW 32kW X X X X X X         Diagram 2.7 50 100 C,I
LH28F800BG 8M 512kx16 X X 4kW 32kW X X X X X X         Diagram 2.7 50 100 C,I
Symmetrical Block Smart Voltage Flash Memory (Full compatible with Flash memories from Intel)
Model Dens Config Erase
block		 Access time (ns) Supply voltage (V) Read
curr-t
mA
Max
8MHz		 Standby
current
µA Max		 Temp
°C
Vcc=5V Vcc=3V Vcc=2.7V Vcc Vpp Single Min
Read
70 90 100 120 100 110 130 140 120 130 150 160 3 5 3 5 5
LH28F160S3 16M 2Mx8/1Mx16 64kB/32kW         X   X   X   X   X   X X   2.7 50 100 C,I
LH28F160S5 16M 2Mx8/1Mx16 64kB/32kW X   X                     X   X X 5 50 100 C,I
LH28F320S3 32M 4Mx8/2Mx16 64kB/32kW           X   X   X   X X   X X   2.7 TBD 100 C,I
LH28F320S5 32M 4Mx8/2Mx16 64kB/32kW   X   X                   X   X X 5 TBD 100 C,I
Flash Memory + SRAM
Model Flash SRAM Access time (ns) Supply voltage (V) Supply current Temp
(°C)		 Pkg
Vcc (V)
Dens Config Erase
block		 Dens Config 3.3 3.6 2.7 Vcc Data retention Flash Operating Max (mA) SRAM Max (mA) Data retension (µA) Standby Max (µA) STSOP
85 85 120 150 2.7 to 3.3 2.7 to 3.6 2.0 to 3.3 2.0 to 3.6 Read Write Flash power off Flash deep power down
LR-S1301 4M 512kx8   1M 128kx8 X     X X   X   12 57 15 1 21 26 C 40
LR-S1302 8M 1Mx8 64kB 1M 128kx8   X   X   X   X 12 57 15 1 13 18 C 40
LR-S1303 8M 1Mx8 64kB 2M 256kx8   X   X   X   X 12 57 25 2 14 20 C 40
LR-S1304 8M 512kx16 32kW 1M 64kx16   X   X   X   X 25 57 25 1 22 26 C 48
LR-S1305 16M 2Mx8 64kB 2M 256kx8   X   X   X   X 12 57 25 2 22 26 C 48
LR-S1306 8M 512kx16 32kW 2M 256kx16   X X     X   X 25 57 25 2 22 26 C 48
LR-S1307 16M 1Mx16 32kW 2M 512kx8   X X     X   X 25 97 25 2 12 16 C 60

Notes:
1. Values for Supply voltage and Supply current are refelecting values for fastest operation, if not otherwise specified.
For the exact value please refer to the datasheet.
2. Temperature Range:
  • C: 0 - +70°C
  • E1: -20 - +70°C
  • E2: -25 - +85°C
  • I: -45 - +85°C

    

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